Thin-film gas sensor implemented on a low-power-consumption micromachined silicon structure

被引：54

作者：

Guidi, V

Cardinali, GC

Dori, L

Faglia, G

Ferroni, M

Martinelli, G

Nelli, P

Sberveglieri, G

机构：

[1] Univ Ferrara, Dipartimento Fis, I-44100 Ferrara, Italy

[2] Univ Ferrara, INFM, I-44100 Ferrara, Italy

[3] CNR, LAMEL Inst, I-40129 Bologna, Italy

[4] Univ Brescia, Dipartimento Chim & Fis Mat, I-25133 Brescia, Italy

[5] Univ Brescia, INFM, I-25133 Brescia, Italy

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 49卷 / 1-2期

关键词：

gas sensor; micromachining; MoO3;

D O I：

10.1016/S0925-4005(98)00039-2

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We report the characterization of thin films of MoO3 and their implementation on a micromachined silicon-based structure to achieve considerably low power consumption. The sensing layer is capable of detecting NO2 up to a few ppm with considerably short response and recovery times. Investigation of structural features of the Rims is carried out by X-ray diffraction and electron microscopy. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：88 / 92

页数：5

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