Highly-Scalable Novel Access Device based on Mixed Ionic Electronic Conduction (MIEC) Materials for High Density Phase Change Memory (PCM) Arrays

被引：108

作者：

Gopalakrishnan, K. ^{[1
]}

Shenoy, R. S. ^{[1
]}

Rettner, C. T. ^{[1
]}

Virwani, K. ^{[1
]}

Bethune, D. S. ^{[1
]}

Shelby, R. M. ^{[1
]}

Burr, G. W. ^{[1
]}

Kellock, A. ^{[1
]}

King, R. S. ^{[1
]}

Nguyen, K. ^{[1
]}

Bowers, A. N. ^{[1
]}

Jurich, M. ^{[1
]}

Jackson, B. ^{[1
]}

Friz, A. M. ^{[1
]}

Topuria, T. ^{[1
]}

Rice, P. M. ^{[1
]}

Kurdi, B. N. ^{[1
]}

机构：

[1] IBM Almaden Res Ctr, San Jose, CA 95120 USA

来源：

2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2010年

关键词：

Access device; Diode; MIEC; PCM; PCRAM;

D O I：

10.1109/VLSIT.2010.5556229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase change memory (PCM) could potentially achieve high density with large, 3D-stacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with < 400 degrees C Back-End-Of-the-Line (BEOL) fabrication.

引用

页码：205 / 206

页数：2