The thermodynamics of codoping: how does it work?

被引:44
作者
Zhang, SB [1 ]
Wei, SH [1 ]
Yan, YF [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
PHYSICA B | 2001年 / 302卷
关键词
codoping; II-VI compounds; wide gap semiconductors;
D O I
10.1016/S0921-4526(01)00418-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using first-principle total energy calculations, we have studied the energetics of codoping [Katayama-Yoshida, Yamamoto, Phys. Stat. Sol. (b) 202 (1997) 763.] in II-VI semiconductors. We demonstrate that (i) for Cd-based II-VI materials such as CdTe, the recently proposed codoping method (e.g.. 2 accepters + 1 donor) may neither increase the solubility of the desired (p-type) dopants nor improve shallowness of the acceptor level. To increase solubility, one needs to suppress the formation of secondary phases involving the dopant by low-T quasi-equilibrium growth/doping processes. To improve the dopant shallowness, one needs to avoid the interaction between the accepters using combinations such as (1 double acceptor + 1 single donor): for example V-Cd(2-) + Cl-Te(perpendicular to). (ii) We further demonstrate that the recent experimental results on p-type ZnO [Joseph et al., Japan J. Appl. Phys. 38 (1999) LI205.] may have little to do with codoping. Instead, the data on n(+)-, p- and p(+)-samples can be consistently understood in terms of increased solubility by incorporating molecular dopants: N2O and NO. The NO doping source is present due to plasma decomposition of N2O. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 139
页数:5
相关论文
共 23 条
  • [1] Polycrystalline thin film solar cells: Present status and future potential
    Birkmire, RW
    Eser, E
    [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1997, 27 : 625 - 653
  • [2] Predictor of p-type doping in II-VI semiconductors
    Chadi, DJ
    [J]. PHYSICAL REVIEW B, 1999, 59 (23) : 15181 - 15183
  • [3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
    CHADI, DJ
    CHANG, KJ
    [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
  • [4] DIAGNOSTICS AND MODELING OF N2O RF GLOW-DISCHARGES
    CLELAND, TA
    HESS, DW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 3103 - 3111
  • [5] COMPAAN AD, 1999, PHOTOVOLTAICS 21 CEN, P242
  • [6] Analysis of the N2O dissociation by r.f. discharges in a plasma reactor
    Date, L
    Radouane, K
    Caquineau, H
    Despax, B
    Couderc, JP
    Yousfi, M
    [J]. SURFACE & COATINGS TECHNOLOGY, 1999, 116 : 1042 - 1048
  • [7] TYPE-I TYPE-II BAND-OFFSET TRANSITION OF THE ZNMGSE-ZNTE SYSTEM
    FERREIRA, SO
    SITTER, H
    FASCHINGER, W
    KRUMP, R
    BRUNTHALER, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 418 - 421
  • [8] JOSEPH M, 1999, JPN J APPL PHYS, V38, P1205
  • [9] KatayamaYoshida H, 1997, PHYS STATUS SOLIDI B, V202, P763, DOI 10.1002/1521-3951(199708)202:2<763::AID-PSSB763>3.0.CO
  • [10] 2-C