Deposition of amorphous nitrogenated carbon films using an alternate plasma deposition method in a dual electron cyclotron resonance-radio frequency plasma

被引:12
作者
Hong, JG [1 ]
Turban, G [1 ]
机构
[1] Univ Nantes, Lab Plasmas & Couches Minces, CNRS, IMN, F-44322 Nantes 3, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1999年 / 17卷 / 01期
关键词
D O I
10.1116/1.581586
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this article, we present a new method for the synthesis of amorphous nitrogenated carbon films using an alternate CH4 plasma deposition/subsequent N-2 plasma treatment, so-called alternate plasma deposition (APD), in a dual electron cyclotron resonance (ECR)-rf plasma. The nitrogen to carbon ratio in the film surface deposited by this method, estimated by x-ray photoelectron spectroscopy (XPS), is considerably higher, by about a factor of 2, than that obtained in the film deposited from a conventional CH4/N-2 plasma. From infrared spectroscopy it is shown that the APD film has the more enhanced disordered phase, which is accompanied by an increase of the amount of sp(2) hybridized carbon-nitrogen bonds, as shown by XPS spectra. (C) 1999 American Vacuum Society. [S0734-2101(99)02601-9].
引用
收藏
页码:314 / 316
页数:3
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