Redshift of the longitudinal optical phonon in neutron irradiated GaP

被引:9
作者
Kuriyama, K [1 ]
Miyamoto, Y
Okada, M
机构
[1] Hosei Univ, Coll Engn, Tokyo 184, Japan
[2] Hosei Univ, Res Ctr Ion Beam Technol, Tokyo 184, Japan
[3] Kyoto Univ, Inst Res Reactor, Osaka 54004, Japan
关键词
D O I
10.1063/1.369708
中图分类号
O59 [应用物理学];
学科分类号
摘要
Redshift of the longitudinal optical (LO) phonon relating to the defect structure in neutron-irradiated GaP has been studied using Raman scattering, electron paramagnetic resonance, x-ray diffraction, and Fourier-transform infrared absorption methods. The defect structure is discussed for the two cases of vacancy-interstitials and antisites using a simple model of the LO-transverse optical phonon frequency splitting (Delta omega). It is suggested that the slight reduction of Delta omega originates from the vacancy-interstitial clusters rather than the antisite defects, considering the annealing behavior of the antisite defect concentrations, the volume expansion, and infrared absorption in neutron-irradiated samples. The clusters are associated with a volume expansion of about 0.13% observed in the neutron-irradiated samples. (C) 1999 American Institute of Physics. [S0021-8979(99)05407-9].
引用
收藏
页码:3499 / 3502
页数:4
相关论文
共 19 条
[1]   ON THE NATURE OF RADIATION DAMAGE IN METALS [J].
BRINKMAN, JA .
JOURNAL OF APPLIED PHYSICS, 1954, 25 (08) :961-970
[2]   PHONON SHIFTS IN ION BOMBARDED GAAS - RAMAN MEASUREMENTS [J].
BURNS, G ;
DACOL, FH ;
WIE, CR ;
BURSTEIN, E ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1987, 62 (07) :449-454
[3]   OPTICAL AND ELECTRICAL EFFECTS OF HIGH-CONCENTRATIONS OF DEFECTS IN IRRADIATED CRYSTALLINE GALLIUM-ARSENIDE [J].
COATES, R ;
MITCHELL, EWJ .
ADVANCES IN PHYSICS, 1975, 24 (05) :593-644
[4]   RAMAN-STUDY OF LOW GROWTH TEMPERATURE GAAS [J].
GANT, TA ;
SHEN, H ;
FLEMISH, JR ;
FOTIADIS, L ;
DUTTA, M .
APPLIED PHYSICS LETTERS, 1992, 60 (12) :1453-1455
[5]  
HARRISON WA, 1980, ELECTRONIC STRUCTURE, pCH9
[6]   DETERMINATION OF EXCESS PHOSPHORUS IN LOW-TEMPERATURE GAP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
HE, Y ;
ELMASRY, NA ;
RAMDANI, J ;
BEDAIR, SM ;
MCCORMICK, TL ;
NEMANICH, RJ ;
WEBER, ER .
APPLIED PHYSICS LETTERS, 1994, 65 (13) :1671-1673
[7]   THE DEEP DOUBLE DONOR PGA IN GAP [J].
KAUFMANN, U ;
SCHNEIDER, J ;
WORNER, R ;
KENNEDY, TA ;
WILSEY, ND .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (31) :L951-L955
[8]   ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].
KAUFMANN, U ;
SCHNEIDER, J ;
RAUBER, A .
APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313
[9]   ELECTRICAL AND OPTICAL-PROPERTIES OF NEUTRON-IRRADIATED GAP CRYSTALS [J].
KAWAKUBO, T ;
OKADA, M .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3111-3114
[10]   IDENTIFICATION OF ISOLATED GA VACANCY IN ELECTRON-IRRADIATED GAP THROUGH EPR [J].
KENNEDY, TA ;
WILSEY, ND .
PHYSICAL REVIEW LETTERS, 1978, 41 (14) :977-980