Non-contact VLSI imaging using a scanning electric potential microscope

被引：29

作者：

Prance, RJ ^{[1
]}

Clark, TD ^{[1
]}

Prance, H ^{[1
]}

Clippingdale, A ^{[1
]}

机构：

[1] Univ Sussex, Sch Engn, Phys Elect Grp, Brighton BN1 9QT, E Sussex, England

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 1998年 / 9卷 / 08期

关键词：

electric field; scanning probe microscope; VLSI testing; non-contact imaging;

D O I：

10.1088/0957-0233/9/8/014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We describe the design and use of a novel scanning microscope which detects changes in electric potential above a surface. We demonstrate that this can be employed to image integrated circuits of considerable complexity in various modes of operation and at a spatial resolution of similar or equal to 1 mu m. We discuss the advantages of applying this imaging technique to the non-invasive evaluation of very large scale integrated circuits and consider possible limits to its resolution and sensitivity in this role.

引用

页码：1229 / 1235

页数：7

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