The gate-length dependent performance of AlGaN/GaN HFETs with silicon nitride passivation

被引：6

作者：

Davies, RA ^{[1
]}

Bazley, DJ ^{[1
]}

Jones, SK ^{[1
]}

Lovekin, HA ^{[1
]}

Phillips, WA ^{[1
]}

Wallis, RH ^{[1
]}

Birbeck, JC ^{[1
]}

Martin, T ^{[1
]}

Uren, MJ ^{[1
]}

机构：

[1] Marconi Caswell Ltd, Towcester NN12 8EQ, Northants, England

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparison has been made of the performance of AlGaN/GaN HFETs, with gate-lengths in the range 0.2 to 2.0 mum, both with and without silicon nitride passivation. Values of I-DSS up to 750mAmm(-1) were seen with pulsed measurements, which eliminate self-heating. For a gate-length of 0.2 mum, a f(t) value of 32GHz and f(max) of 72GHz were seen, increasing to 37GHz and 79GHz respectively, after passivation. Passivation also caused an increase in Vp, particularly at short gate-lengths. An explanation, based on the contribution of stress in the passivation layer, is proposed. It gives qualitative agreement with measurements.

引用

页码：76 / 81

页数：6

共 9 条

[1]

Bernardini F, 1999, PHYS STATUS SOLIDI B, V216, P391, DOI 10.1002/(SICI)1521-3951(199911)216:1<391::AID-PSSB391>3.0.CO

[2]

2-K

[3]

BINARI SC, 2000, P INT C GAAS MAN TEC, P201

[4] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

[5]

HUGHES BT, 1999, P EMDO, P59

[6]

JONES SK, 1999, P EDMO, P65

[7]

LADBROOKE PH, 2000, P GAAS, P612

[8]

WALLIS RH, IN PRESS J CRYSTAL G

[9]

WU YF, 2000, IEEE MTS INT MICR S

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