Improved voltage tripler structure with symmetrical stacking charge pump

被引：8

作者：

Zhang, M ^{[1
]}

Llaser, N ^{[1
]}

Devos, F ^{[1
]}

机构：

[1] Univ Paris 11, AXIS, IEF, F-91405 Orsay, France

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 11期

关键词：

D O I：

10.1049/el:20010452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved voltage tripler with a symmetrical stacking charge pump is proposed. In this original voltage tripler, parasitic capacitances are pre-charged to reduce their influence, thus reducing the output voltage loss due to parasitic capacitances by a factor of 2.

引用

页码：668 / 669

页数：2