Optical properties of InAs quantum dots in a Si matrix

被引：65

作者：

Heitz, R ^{[1
]}

Ledentsov, NN

Bimberg, D

Egorov, AY

Maximov, MV

Ustinov, VM

Zhukov, AE

Alferov, ZI

Cirlin, GE

Soshnikov, IP

Zakharov, ND

Werner, P

Gösele, U

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 12期

关键词：

D O I：

10.1063/1.123660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix. At a growth temperature of 400 degrees C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2-4 nm range. A luminescence band in the 1.3 mu m region found exclusively for samples with such InAs QDs exhibits a pronounced excitation density dependence of the peak position and a decay time of 440 ns. The optical properties suggest an indirect type II transition for InAs/Si QDs. The electronic structure of InAs/Si QDs is discussed in view of available band offset information. (C) 1999 American Institute of Physics. [S0003-6951(99)00512-4].

引用

页码：1701 / 1703

页数：3

共 20 条

[1] CONCENTRATION-DEPENDENCE OF OPTICAL-EMISSION FROM SULFUR-DOPED CRYSTALLINE SILICON [J].

BROWN, TG ;

BRADFIELD, PL ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1585-1587

[2] OPTICAL-EMISSION AT 1.32-MU-M FROM SULFUR-DOPED CRYSTALLINE SILICON [J].

BROWN, TG ;

HALL, DG .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :245-247

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] Fabrication of InAs quantum dots on silicon [J].

Cirlin, GE ;

Petrov, VN ;

Dubrovskii, VG ;

Masalov, SA ;

Golubok, AO ;

Komyak, NI ;

Ledentsov, NN ;

Alferov, ZI ;

Bimberg, D .

TECHNICAL PHYSICS LETTERS, 1998, 24 (04) :290-292

[5] THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON [J].

DAVIES, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1989, 176 (3-4) :83-188

[6] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[7] Photoluminescence studies of self-assembled InSb, GaSb, and AlSb quantum dot heterostructures [J].

Glaser, ER ;

Bennett, BR ;

Shanabrook, BV ;

Magno, R .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3614-3616

[8] Carrier dynamics in type-II GaSb/GaAs quantum dots [J].

Hatami, F ;

Grundmann, M ;

Ledentsov, NN ;

Heinrichsdorff, F ;

Heitz, R ;

Bohrer, J ;

Bimberg, D ;

Ruvimov, SS ;

Werner, P ;

Ustinov, VM ;

Kop'ev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1998, 57 (08) :4635-4641

[9] Energy relaxation by multiphonon processes in InAs/GaAs quantum dots [J].

Heitz, R ;

Veit, M ;

Ledentsov, NN ;

Hoffmann, A ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Alferov, ZI .

PHYSICAL REVIEW B, 1997, 56 (16) :10435-10445

[10]

Ledentsov N. N., 1996, P 23 INT C PHYS SEM, V1, P19

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