Comprehensive modeling of near-field nano-patterning

被引：16

作者：

Rumpf, RC ^{[1
]}

Johnson, EG

机构：

[1] Univ Cent Florida, Coll Opt, CREOL, Orlando, FL 32816 USA

[2] Univ Cent Florida, FPCE, Orlando, FL 32816 USA

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 18期

关键词：

D O I：

10.1364/OPEX.13.007198

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Near-field nano-patterning greatly simplifies holographic lithography, but deformations in formed structures are potentially severe. A fast and efficient comprehensive model was developed to predict geometry more rigorously. Numerical results show simple intensity-threshold methods do not accurately predict shape or optical behavior. By modeling sources with partial coherence, unpolarized light, and an angular spectrum, it is shown that standard UV lamps can be used to form 3D structures. (c) 2005 Optical Society of America

引用

页码：7198 / 7208

页数：11

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