Formation of robust junction between Cu(InGa)Se2-based absorber and Zn(O,S,OH)x buffer prepared on a 30cmx30cm submodule

被引：3

作者：

Kushiya, K ^{[1
]}

Hara, I ^{[1
]}

Tanaka, Y ^{[1
]}

Morishita, T ^{[1
]}

Okumura, D ^{[1
]}

Nagoya, Y ^{[1
]}

Tachiyuki, M ^{[1
]}

Sang, B ^{[1
]}

Yamase, O ^{[1
]}

机构：

[1] Showa Shell Sekiyu KK, Atsugi, Kanagawa 2430206, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915859

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An important key to realize the strong requirement on the electrical yield (i.e. 85 % in the efficiency of over 10 % in 30cmx30cm-sized CIGS-based circuits with an aperture area of over 810 cm(2)) has been indicated to make a robust junction between CIGS-based absorber and Zn(O,S,OH)(x) buffer. In this study, the baseline process for CBD-Zn(O,S,OH)(x) buffer deposition is investigated from the standpoint of reduction of the deviation of FF. By monitoring the transparency or transmittance (%T) of the CBD solution as a new control parameter, the Zn(O,S,OH)(x) buffer deposition process is much stabilized especially on the thickness uniformity measured by LBIC technique. From this approach, it is confirmed that much narrower distribution of FF in the range of over 0.6 can be steadily achieved by improving the thickness uniformity of the buffer and, as a result, the achievement of the above goal is well foreseeable.

引用

页码：424 / 427

页数：4

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