Bulk Heterojunction Polymer Memory Devices with Reduced Graphene Oxide as Electrodes

被引：205

作者：

Liu, Juqing ^{[1
,2
]}

Yin, Zongyou ^{[3
]}

Cao, Xiehong ^{[3
]}

Zhao, Fei ^{[1
,2
]}

Lin, Anping ^{[1
,2
]}

Xie, Linghai ^{[1
,2
]}

Fan, Quli ^{[1
,2
]}

Boey, Freddy ^{[3
,4
]}

Zhang, Hua ^{[3
,4
]}

Huang, Wei ^{[1
,2
]}

机构：

[1] Nanjing Univ Posts & Telecommun, KLOEID, Nanjing 210046, Peoples R China

[2] Nanjing Univ Posts & Telecommun, IAM, Nanjing 210046, Peoples R China

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[4] Nanyang Technol Univ, Ctr Biomimet Sensor Sci, Singapore 637553, Singapore

来源：

ACS NANO | 2010年 / 4卷 / 07期

关键词：

polymer memory; bulk heterojunction; write-once-read-many-times; reduced graphene oxide; sheet resistance; DONOR; EXFOLIATION; COPOLYMER;

D O I：

10.1021/nn100877s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/AI has been designed for the polymer nonvolatile memory device. The current voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

引用

页码：3987 / 3992

页数：6

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