Effects of Ga+ ion implantation on the magneto resistive properties of spin valves

被引：13

作者：

Kerr, E ^{[1
]}

van Dijken, S ^{[1
]}

Langford, RM ^{[1
]}

Coey, JMD ^{[1
]}

机构：

[1] Dept Phys, SFI Trinity Nanosci Lab, Dublin 2, Ireland

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2005年 / 290卷

关键词：

spin valve; ion implantation; focussed ion beam patterning; magnetoresisitance;

D O I：

10.1016/j.jmmm.2004.11.229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of Ga+ ion implantation in SiO2/Ta(5nm)/NiFe(3.5nm)/CoFe(1.5nm)/Cu(2.9nm) /CoFe(2.5nm)/ IrMn(10 nm)/Ta(5 nm) spin valve stacks were investigated. As-deposited films show a giant magnetoresistance (GMR) of 7.3% and an exchange bias field (H-cx) of 42mT. After implantation with 30keV Ga+ ions at doses ranging from 10(12) to 10(16) ions/cm(2), we observe a dramatic decrease in GMR and exchange bias field together with an increase in film resistance. The effects of Ga+ ion implantation during FIB milling of small GMR elements was investigated by reducing 10 mu m spin valve lines to line widths ranging from 7 to 0.5 mu m. The GMR and exchange bias field were found to rapidly decrease with decrease in spin valve width. Magnetic field annealing after Ga+ ion implantation does not restore the spin valve properties. (c) 2004 Elsevier B.V. All rights reserved.

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页码：124 / 126

页数：3

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