Megawatt solid-state electronics

被引：66

作者：

Brown, ER ^{[1
]}

机构：

[1] DARPA Elect Technol Off, Arlington, VA 22203 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(98)00245-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews some of the key challenges in developing solid-state electronics operating at power levels from approximately 0.1 to beyond 1 MW. Applications exist in this range of power for military and commercial applications alike. The technology of great interest is wide-band-gap semiconductors. particularly SC, which is well known for its superior electrical strength and thermal conductivity compared to the traditional power semiconductor, Si. These properties can be utilized to have significant benefits at both the device and systems level. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：2119 / 2130

页数：12

共 9 条

[1]

Baliga B. J., 1996, POWER SEMICONDUCTOR

[2] POWER ICS IN THE SADDLE [J].

BALIGA, BJ .

IEEE SPECTRUM, 1995, 32 (07) :34-&

[3] EVOLUTION OF MOS-BIPOLAR POWER SEMICONDUCTOR TECHNOLOGY [J].

BALIGA, BJ .

PROCEEDINGS OF THE IEEE, 1988, 76 (04) :409-418

[4]

HINGORANI NG, 1993, SCI AM NOV, P78

[5]

HINGORANI NG, 1990, IEEE SPECTRUM APR, P63

[6]

KAPLAN G, 1997, IEEE SPECTRUM JAN, P80

[7]

KAPLAN G, 1996, IEEE SPECTRUM JAN, P96

[8]

RAMUNGUL N, 1997 ALL EL COMB VEH

[9]

Tummala R.R., 1989, Microelectronics Packaging Handbook

← 1 →