Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots

被引：61

作者：

Chen, Chen-Chia ^{[1
,2
]}

Chiu, Mao-Yuan ^{[2
]}

Sheu, Jeng-Tzong ^{[1
]}

Wei, Kung-Hwa ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Nanotechnol, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

关键词：

D O I：

10.1063/1.2899997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the optical responses and memory effects of poly(3-hexylthiophene) (P3HT)/CdSe quantum dot (QD) thin-film transistors (TFTs). TFTs incorporating P3HT/CdSe QD blends as the active layer exhibited higher photocurrents than did the corresponding P3HT-only devices because the heterojunction between P3HT and the CdSe QDs enhanced the separation of excitons. Moreover, the CdSe QDs served as trap centers so that the memory effect was maintained for several hours, even when the device was operated without a gating voltage. Here, we demonstrate the potential applicability of such P3HT/CdSe QD TFTs through repeated optical programming and electrical erasing. (C) 2008 American Institute of Physics.

引用

页数：3

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