Morphology of graphene thin film growth on SiC(0001)

被引：142

作者：

Ohta, Taisuke ^{[1
,2
]}

El Gabaly, Farid ^{[3
]}

Bostwick, Aaron ^{[1
]}

McChesney, Jessica L. ^{[1
,2
]}

Emtsev, Konstantin V. ^{[4
]}

Schmid, Andreas K. ^{[3
]}

Seyller, Thomas ^{[4
]}

Horn, Karsten ^{[2
]}

Rotenberg, Eli ^{[1
]}

机构：

[1] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA USA

[2] Max Planck Gesell, Fritz Haber Inst, D-1000 Berlin, Germany

[3] Lawrence Berkeley Natl Lab, Natl Ctr Electron Microscopy, Berkeley, CA USA

[4] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, Erlangen, Germany

来源：

NEW JOURNAL OF PHYSICS | 2008年 / 10卷

关键词：

D O I：

10.1088/1367-2630/10/2/023034

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as an applications-oriented point of view. Here, we study the emerging morphology of in vacuo prepared graphene films using low-energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). We obtain an identification of single-layer and bilayer graphene films by comparing the characteristic features in electron reflectivity spectra in LEEM to the pi-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.

引用

页数：7

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