Structure Change Induced by Terminal Sulfur in Noncentrosymmetric La2Ga2GeS8 and Eu2Ga2GeS7 and Nonlinear-Optical Responses in Middle Infrared

被引：73

作者：

Chen, Mei-Chun ^{[1
,2
]}

Li, Peng ^{[1
]}

Zhou, Liu-Jiang ^{[1
,2
]}

Li, Long-Hua ^{[1
]}

Chen, Ling ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Optoelect Mat Chem & Phys, Fuzhou 350002, Fujian, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China

来源：

INORGANIC CHEMISTRY | 2011年 / 50卷 / 24期

基金：

中国国家自然科学基金;

关键词：

CRYSTAL-STRUCTURE; CHALCOGENIDES; DAMAGE; GA; GE;

D O I：

10.1021/ic2020513

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Two new noncentrosymmetric quaternary sulfides, La2Ga2GeS8 (1) and Eu2Ga2GeS7 (2), have been synthesized by high-temperature solid-state reactions. The structure change on going from 1 to 2 to the known Li2Ga2GeS6 (3) nicely shows that the reduced cation charge-compensation requirement causes a decrease in the number of terminal S atoms per formula, which is a key to determining the connectivity of the GaS4 and GeS4 building units. Powder sample 2 exhibits a strong second-harmonic-generation (SHG) response of about 1.6 times the benchmark AgGaS2 at 2.05 mu m laser radiation, a non type I phase-matchable behavior, and a comparable transparency region. The SHG intensities of these compounds originate from the electronic transitions from S 3p states to La/Eu/Li-S, Ga-S, and Ge-S antibonding states according to Vienna ab initio simulation package studies.

引用

页码：12402 / 12404

页数：3

共 19 条

[1]

[Anonymous], 1932, NATURE, DOI DOI 10.1038/130490A0

[2]

BELOKONEVA EL, 1981, DOKL AKAD NAUK SSSR+, V260, P1363

[3] Ln-Phase Alignments of Asymmetric Building Units in Ln4GaSbS9 (Ln = Pr, Nd, Sm, Gd-Ho) and Their Strong Nonlinear Optical Responses in Middle IR [J].

Chen, Mei-Chun ;

Li, Long-Hua ;

Chen, Yu-Biao ;

Chen, Ling .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (12) :4617-4624

[4] New data on the nonlinear optical constant, phase-matching, and optical damage of AgGaS2 [J].

Harasaki, A ;

Kato, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02) :700-703

[5] Ternary chalcogenides LiBC2 (B = In, Ga; C=S, Se, Te) for mid-IR nonlinear optics [J].

Isaenko, L. ;

Yelisseyev, A. ;

Lobanov, S. ;

Krinitsin, P. ;

Petrov, V. ;

Zondy, J. -J. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) :2439-2443

[6] PRESSURE-DEPENDENCE OF ENERGY-GAP IN SOME I-III-VI2 COMPOUND SEMICONDUCTORS [J].

JAYARAMAN, A ;

NARAYANAMURTI, V ;

KASPER, HM ;

CHIN, MA ;

MAINES, RG .

PHYSICAL REVIEW B, 1976, 14 (08) :3516-3519

[7]

Kahn O., 1993, MOL MAGNETISM

[8] Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6 [J].

Kim, Youngsik ;

Seo, In-Seok ;

Martin, Steve W. ;

Baek, Jaewook ;

Halasyamani, P. Shiv ;

Arumugam, Nachiappan ;

Steinfink, Hugo .

CHEMISTRY OF MATERIALS, 2008, 20 (19) :6048-6052

[9] Second-Harmonic Generation and Crystal Structure of the Diamond-like Semiconductors Li2CdGeS4 and Li2CdSnS4 [J].

Lekse, Jonathan W. ;

Moreau, Meghann A. ;

McNerny, Katie L. ;

Yeon, Jeongho ;

Halasyamani, P. Shiv ;

Aitken, Jennifer A. .

INORGANIC CHEMISTRY, 2009, 48 (16) :7516-7518

[10] Synthesis, structure and theoretical studies of a new ternary non-centrosymmetric β-LaGaS3 [J].

Li, Peng ;

Li, Long-Hua ;

Chen, Ling ;

Wu, Li-Ming .

JOURNAL OF SOLID STATE CHEMISTRY, 2010, 183 (02) :444-450

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