Instabilities in low-pressure electronegative inductive discharges

被引:105
作者
Chabert, P [1 ]
Lichtenberg, AJ [1 ]
Lieberman, MA [1 ]
Marakhtanov, AM [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1088/0963-0252/10/3/313
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Plasma instabilities have been studied in low-pressure inductive processing discharges with SF6 and Ar/SF6 mixtures, i.e. attaching gases. Oscillations are seen in charged particle density, electron temperature and plasma potential using electrostatic probe and optical emission measurements. For SF6, instability onset in pressure and driving power has been explored for gas pressures between 2.5 and 100 mTorr and absorbed powers between 150 and 900 W. For pressures above 20 mTorr, increasing power is required to obtain the instability with increasing pressure, with the frequency of the instability increasing with pressure, mainly lying between 1 and 100 kHz. For Ar/SF6 mixtures, we observe a similar low power transition, with an upper transition to a stable inductive mode. The instability windows become smaller as the argon partial pressure increases. For Ar/SF6 mixtures, we observe a significant effect of the matching network. We improve a previously developed volume-averaged (global) model to describe the instability. We consider a cylindrical discharge containing time varying electrons, positive ions, negative ions, and time invariant excited states. The driving power is applied to the discharge through a conventional L-type capacitive matching network, and we use realistic models for the inductive and capacitive energy deposition. The particle and energy balance equations are integrated, considering quasi-neutrality in the plasma volume and charge balance at the walls, to produce the dynamical behaviour. As pressure or power is varied to cross a threshold, the instability is born at a Hopf bifurcation, with relaxation oscillations between higher and lower density states. The model qualitatively agrees with experimental observations, and also shows a significant influence of the matching network.
引用
收藏
页码:478 / 489
页数:12
相关论文
共 22 条
[1]  
Barkalov A. D., 1979, Soviet Physics - Technical Physics, V24, P1203
[2]   Electrostatic probe measurement of the negative ion fraction in an SF6 helicon discharge [J].
Chabert, P ;
Sheridan, TE ;
Boswell, RW ;
Perrin, J .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1999, 8 (04) :561-566
[3]   Kinetic model for a low-pressure discharge with negative ions [J].
Chabert, P ;
Sheridan, TE .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (15) :1854-1860
[4]   Electron interactions with SF6 [J].
Christophorou, LG ;
Olthoff, JK .
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA, 2000, 29 (03) :267-330
[5]   Hysteresis in the E- to H-mode transition in a planar coil, inductively coupled rf argon discharge [J].
El-Fayoumi, IM ;
Jones, IR ;
Turner, MM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (21) :3082-3094
[6]   Ion compositions and energies in inductively coupled plasmas containing SF6 [J].
Goyette, AN ;
Wang, YC ;
Olthoff, JK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04) :1294-1297
[7]   Model and measurements for a planar inductive oxygen discharge [J].
Gudmundsson, JT ;
Lieberman, MA .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (01) :1-12
[8]  
GUDMUNDSSON JT, 1996, THESIS BERKELEY
[9]  
HASS RA, 1973, PHYS REV A, V8, P1017
[10]   NOVEL RADIOFREQUENCY INDUCTION PLASMA PROCESSING TECHNIQUES [J].
KELLER, JH ;
FORSTER, JC ;
BARNES, MS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (05) :2487-2491