Low-temperature process in growing carbon nanotube

被引：16

作者：

Chang, Shang-Chou ^{[1
]}

Lin, Tien-Chai ^{[1
]}

Pai, Chen-Yu ^{[1
]}

机构：

[1] Kun Shan Univ, Dept Elect Engn, Tainan 71003, Taiwan

来源：

MICROELECTRONICS JOURNAL | 2007年 / 38卷 / 6-7期

关键词：

low temperature; carbon nanotube;

D O I：

10.1016/j.mejo.2007.06.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Nickel particles, converted from film by microwave hydrogen plasma at a low temperature of 250 degrees C, were used as the catalyst for growing carbon nanotubes (CNTs). Low-temperature process is desirable for CNT application in flat panel display industry. We found that the processing pressure and microwave power can greatly influence the nickel particle size and density. The processing pressure during pretreatment affects the CNT to be grown or not at all. The microwave power affects the particle size of the catalyst and the diameter of the grown CNT. It was also found that after pretreatment, the diameter of the grown CNT is proportional to the catalyst particle size. The threshold electric field of CNT field emission was found reduced as the diameter of the CNT became smaller. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：657 / 662

页数：6

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