Electronic structure and visible-light-driven photocatalytic performance of Cd2SnO4

被引:19
作者
Huang, Xianli [1 ,2 ,3 ]
Lv, Jun [1 ,2 ]
Li, Zhaosheng [1 ,2 ]
Zou, Zhigang [1 ,2 ]
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Phys, Ecomat & Renewable Energy Res Ctr ERERC, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Univ Aeronaut & Astronaut, Dept Appl Chem, Nanjing 210016, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductor; Band structure; Photocatalysis; Oxide; SHUTTLE REDOX MEDIATOR; WATER; IRRADIATION; SYSTEM; O-2; H-2; WO3;
D O I
10.1016/j.jallcom.2010.05.126
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cd2SnO4 conducting oxide was prepared via a solid state reaction method, and its photocatalytic O-2 evolution performance was presented. The band gaps were estimated to be 2.3 eV for Cd2SnO4 calcined at 1050 degrees C, 2.4 eV for Cd2SnO4 calcined at 900 degrees C and 800 degrees C. The catalysts prepared at 800 degrees C possessed the largest surface area and the best catalytic activities. The band structure was calculated by a density function theory method. The conduction band bottom was composed of Cd5s, Sn5s and Sn5p orbits, and the valence band top of Cd4d and O2p. The high photocatalytic activities of Cd2SnO4 were attributed to its specific band structures. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:341 / 344
页数:4
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