Lattice-matching SiC substrates with GaN

被引：54

作者：

Ren, SY ^{[1
]}

Dow, JD ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT PHYS & ASTRON,TEMPE,AZ 85287

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.117940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using arguments based on both electronic structure calculations and ionic radii, we propose that interfacial charges contribute to the ionic part of the lattice mismatch. As a result, the Si-terminated 6H-SiC(0001) surface is a superior substrate for GaN to the C-terminated surface. This viewpoint unifies (i) the Sasaki-Matsuoka proposal that substrate quality depends on electrical polarity and (ii) the conventional viewpoint that the best substrate has zero lattice mismatch with the film deposited on it. (C) 1996 American Institute of Physics.

引用

页码：251 / 253

页数：3

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