Random resistor network model of minimal conductivity in graphene

被引：106

作者：

Cheianov, Vadim V. ^{[1
]}

Fal'ko, Vladimir I.

Altshuler, Boris L.

Aleiner, Igor L.

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] NEC Labs Amer Inc, Princeton, NJ USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevLett.99.176801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

引用

页数：4

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