Surface passivation of (001) GaAs with self-assembled monolayers of long-chain thiols

被引:7
作者
Ding, XM [1 ]
Dubowski, JJ [1 ]
机构
[1] Univ Sherbrooke, Dept Elect & Comp Engn, RQMP, Sherbrooke, PQ J1K 2R1, Canada
来源
Photon Processing in Microelectronics and Photonics IV | 2005年 / 5713卷
关键词
GaAs; surface passivation; self-assembled monolayers; thiol-semiconductor interface; photoluminescence;
D O I
10.1117/12.605649
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Passivation of (001) GaAs surface was investigated with self-assembled monolayers (SAMs) of a variety of thiols having various methylene chain length and terminal groups. The effect of passivation was monitored by measuring the intensity of the GaAs-related photoluminescence (PL) signal excited with lasers operating either at 683 or 248 nm wavelengths. Generally, for each case of the thiol treated surface the PL signal was more intense than that from non-treated samples. Additionally, it was found that the thiol terminal groups play an important role in determining the methylene chain orientation in the SAMs and consequently the efficiency of the passivation. The methyl terminated methylene chain formed a layer of a closely packed and relatively thick film, which resulted in a significantly increased PL signal. In contrast, carboxylic acid group (-CO2H) terminated methylene chains formed thin and less compacted films, leading to only a slightly increased PL signal and less efficient passivation of the GaAs surface.
引用
收藏
页码:545 / 551
页数:7
相关论文
共 22 条
[1]   Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes [J].
Adlkofer, K ;
Tanaka, M ;
Hillebrandt, H ;
Wiegand, G ;
Sackmann, E ;
Bolom, T ;
Deutschmann, R ;
Abstreiter, G .
APPLIED PHYSICS LETTERS, 2000, 76 (22) :3313-3315
[2]   Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution [J].
Alperovich, VL ;
Tereshchenko, OE ;
Rudaya, NS ;
Sheglov, DV ;
Latyshev, AV ;
Terekhov, AS .
APPLIED SURFACE SCIENCE, 2004, 235 (03) :249-259
[3]   Formation of self-assembled monolayers of alkanethiols on GaAs surface with in situ surface activation by ammonium hydroxide [J].
Baum, T ;
Ye, S ;
Uosaki, K .
LANGMUIR, 1999, 15 (25) :8577-8579
[4]   FABRICATION OF IN-PLANE-GATE TRANSISTOR STRUCTURES BY FOCUSED LASER BEAM-INDUCED ZN DOPING OF MODULATION-DOPED GAAS/ALGAAS QUANTUM-WELLS [J].
BAUMGARTNER, P ;
BRUNNER, K ;
ABSTREITER, G ;
BOHM, G ;
TRANKLE, G ;
WEIMANN, G .
APPLIED PHYSICS LETTERS, 1994, 64 (05) :592-594
[5]   FABRICATION OF LATERAL NPN-PHOTOTRANSISTORS WITH HIGH-GAIN AND SUB-MU-M SPATIAL-RESOLUTION [J].
BAUMGARTNER, P ;
ENGEL, C ;
ABSTREITER, G ;
BOHM, G ;
WEIMANN, G .
APPLIED PHYSICS LETTERS, 1995, 66 (06) :751-753
[6]   Electronic properties of GaAs(100) surface passivated in alcoholic sulfide solutions [J].
Bessolov, VN ;
Lebedev, MV ;
Ivankov, AF ;
Bauhofer, W ;
Zahn, DRT .
APPLIED SURFACE SCIENCE, 1998, 133 (1-2) :17-22
[7]  
Dargys A, 1994, Handbook on Physical Properties of Ge, Si, GaAs and InP
[8]  
DING XT, IN PRESS
[9]   NEAR-SURFACE ELECTRONIC-STRUCTURE IN GAAS (100) MODIFIED WITH SELF-ASSEMBLED MONOLAYERS OF OCTADECYLTHIOL [J].
DORSTEN, JF ;
MASLAR, JE ;
BOHN, PW .
APPLIED PHYSICS LETTERS, 1995, 66 (14) :1755-1757
[10]   Passivation of GaAs (100) with an adhesion promoting self-assembled monolayer [J].
Hou, T ;
Greenlief, M ;
Keller, SW ;
Nelen, L ;
Kauffman, JF .
CHEMISTRY OF MATERIALS, 1997, 9 (12) :3181-3186