Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

被引:37
作者
Bester, G. [1 ]
Reuter, D.
He, Lixin
Zunger, A.
Kailuweit, P.
Wieck, A. D.
Zeitler, U.
Maan, J. C.
Wibbelhoff, O.
Lorke, A.
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Ruhr Univ Bochum, D-44801 Bochum, Germany
[3] High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands
[4] Univ Duisburg Essen, D-47048 Duisburg, Germany
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 07期
关键词
D O I
10.1103/PhysRevB.76.075338
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry, and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.
引用
收藏
页数:7
相关论文
共 26 条
[1]   TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].
BARDEEN, J .
PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&
[2]   Compositional and size-dependent spectroscopic shifts in charged self-assembled InxGa1-xAs/GaAs quantum dots -: art. no. 073309 [J].
Bester, G ;
Zunger, A .
PHYSICAL REVIEW B, 2003, 68 (07)
[3]   Effects of linear and nonlinear piezoelectricity on the electronic properties of InAs/GaAs quantum dots [J].
Bester, Gabriel ;
Zunger, Alex ;
Wu, Xifan ;
Vanderbilt, David .
PHYSICAL REVIEW B, 2006, 74 (08)
[4]  
Bimberg D., 1999, QUANTUM DOT HETEROST
[5]   Magnetic-field dependence of hole levels in self-assembled InGaAs quantum dots [J].
Climente, JI ;
Planelles, J ;
Pi, M ;
Malet, F .
PHYSICAL REVIEW B, 2005, 72 (23)
[6]   SPECTROSCOPY OF QUANTUM LEVELS IN CHARGE-TUNABLE INGAAS QUANTUM DOTS [J].
DREXLER, H ;
LEONARD, D ;
HANSEN, W ;
KOTTHAUS, JP ;
PETROFF, PM .
PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2252-2255
[7]   Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].
Fricke, M ;
Lorke, A ;
Kotthaus, JP ;
MedeirosRibeiro, G ;
Petroff, PM .
EUROPHYSICS LETTERS, 1996, 36 (03) :197-202
[8]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[9]   ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].
GUHA, S ;
MADHUKAR, A ;
RAJKUMAR, KC .
APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112
[10]   Electronic phase diagrams of carriers in self-assembled quantum dots: Violation of Hund's rule and the Aufbau principle for holes [J].
He, LX ;
Bester, G ;
Zunger, A .
PHYSICAL REVIEW LETTERS, 2005, 95 (24)