Formation of subsurface oxygen at Ru(0001)

被引:89
作者
Böttcher, A [1 ]
Niehus, H [1 ]
机构
[1] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany
关键词
D O I
10.1063/1.477839
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The conditions for formation of subsurface oxygen on the Ru(0001) surface have been studied using thermal desorption spectroscopy, low energy electron diffraction (LEED) and specular helium scattering. The incorporation of oxygen has been performed via dissociative chemisorption of three molecular carriers of atomic oxygen: NO2, O-2 and N2O. The rates for oxygen dissolution can be related to the initial dissociative sticking probability of the molecules on the bare Ru surface. For sample temperatures below 800 K, oxygen penetration into the subsurface region starts only when oxygen molecules impinge on the saturated adsorbed layer characterized by the 1X1 O LEED pattern, indicative of 1 monolayer. A thermally induced transformation of this chemisorbed 1X1 O phase into subsurface oxygen could not be caused even at temperatures close to the onset of oxygen desorption. Oxygen incorporation into the subsurface region by passing through the 1X1 O adsorbed layer, however, shows Arrhenius-type behavior. For impinging O-2 molecules, the onset of subsurface oxygen formation appears at 550 K and the entire process is characterized by a rather low activation energy of about 0.5 eV. Deposition of alkali metals on the Ru(0001) surface does not enhance the probability for oxygen dissolution. The resulting oxygen content is substantially reduced and this effect strongly depends on the coverage of alkali-metal atoms. In contrast structural defects on the Ru surface, as generated by Ar 1 sputtering and characterized by specular He scattering, act as promoters for oxygen accommodation. The onset for oxygen penetration on a rough surface already begins at about 350 K and the resulting oxygen content can be directly related to the surface roughness. (C) 1999 American Institute of Physics. [S0021-9606(99)71105-0].
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页码:3186 / 3195
页数:10
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