The role of controlled nucleation in the growth of CdS thin films on ITO/glass for solar cells

被引:10
作者
Berrigan, RA [1 ]
Irvine, SJC
Stafford, A
Cole-Hamilton, DJ
Ellis, D
机构
[1] NE Wales Inst, Optoelect Mat Res Lab, Wrexham L11 2AW, Clywd, Wales
[2] Univ St Andrews, Dept Chem, St Andrews KY16 9ST, Fife, Scotland
关键词
D O I
10.1023/A:1008864304289
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The MOCVD growth of cadmium sulphide from dimethyl cadmium and ditertiarybutyl sulphide on indium tin oxide (ITO) coated glass is optimized in this work. Optimum transmission characteristics and grain size are observed for films grown at 290 degrees C at VI/II ratios of 1-1.5. This was related to the identification of a nucleation delay during in situ growth monitoring via laser interferometry. The nucleation delay is noted to vary with temperature and also VI/II ratio, allowing the rationalization of the resulting film quality in terms of this observation. Structural analysis indicates polycrystalline CdS of hexagonal phase of (1 0 0) preferred orientation. (C) 1998 Kluwer Academic Publishers.
引用
收藏
页码:267 / 270
页数:4
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