Scanning single-electron transistor microscopy: Imaging individual charges

被引：235

作者：

Yoo, MJ ^{[1
]}

Fulton, TA ^{[1
]}

Hess, HF ^{[1
]}

Willett, RL ^{[1
]}

Dunkleberger, LN ^{[1
]}

Chichester, RJ ^{[1
]}

Pfeiffer, LN ^{[1
]}

West, KW ^{[1
]}

机构：

[1] BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

SCIENCE | 1997年 / 276卷 / 5312期

关键词：

D O I：

10.1126/science.276.5312.579

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A single-electron transistor scanning electrometer (SETSE)-a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron-has been developed. The active sensing element of the SETSE, a single-electron transistor fabricated. at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1-xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.

引用

页码：579 / 582

页数：4

共 17 条

[1] Electrons in artificial atoms [J].