Piecewise diffusion of the silicon dimer

被引：53

作者：

Borovsky, B ^{[1
]}

Krueger, M ^{[1
]}

Ganz, E ^{[1
]}

机构：

[1] Univ Minnesota, Dept Phys, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.59.1598

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a detailed view of the diffusion of silicon dimers on the silicon (001) surface. Through a combination of atom tracking and ab initio modeling, the dimer is shown to move one atom at a time rather than as a two-atom unit. The details of the pathway depend on the diffusion channel: On top of dimer rows, the two atoms of a dimer separate but remain bound during diffusion. In the troughs between dimer rows, the two atoms separate completely and move independently before rejoining in a new location. [S0163-1829(99)02104-9].

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页码：1598 / 1601

页数：4

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