Resistance of molecular nanostructures

被引：28

作者：

Tian, WD

Datta, S ^{[1
]}

Hong, SH

Reifenberger, RG

Henderson, JI

Kubiak, CP

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[3] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA

来源：

PHYSICA E | 1997年 / 1卷 / 1-4期

关键词：

self-assembled monolayers (SAMs); scanning tunneling microscopy (STM); current-voltage spectroscopy;

D O I：

10.1016/S1386-9477(97)00065-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper describes a theoretical model that can be used to calculate the current-voltage (I-V) characteristics of molecular monolayers as measured between two contacts. Numerical results are presented for alpha, alpha'-xylyl dithiol showing that the I-V characteristics are sensitive to two parameters: the equilibrium Fermi energy, E-f, and the voltage division factor, eta, which determines the shift in the molecular energy levels in response to the applied bias. Experimental data are presented showing good agreement with the theory. (C) 1997 Elsevier Science B.V. All rights reserved.

引用

页码：304 / 309

页数：6

共 18 条

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