Conductive bi-level resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithography

We propose a new bi-level resist system for nanometer lithography based on a poly-silphenylenesiloxene resist over a conductive polianiline bottom layer for nanometer lithography. By introducing suitable polar functional groups, the polysilphenylenesiloxane negative electron-beam (EB) resist exhibits high sensitivity and high resolution with tetramethylammoniumhydroxide (TMAH) development. The sulfonated polyaniline in the conductive bottom layer can reduce resist charging and width shifts in the oxygen plasma etching. This conductive bi-level resist system can reduce pattern distortion from alignment errors and the proximity effect. The conductive resist system can also reduce the gate oxide leakage or breakdown caused by resist charging during the plasma etching process in MOS-LSI device fabrication. This system shows high pattern accuracy and process reliability, demonstrating its high potential, for application in nanometer generation ULSI production.