Polarisation insensitive, 25dB gain semiconductor laser amplifier without antireflection coatings

被引：21

作者：

Kelly, AE ^{[1
]}

Lealman, IF ^{[1
]}

Rivers, LJ ^{[1
]}

Perrin, SD ^{[1
]}

Silver, M ^{[1
]}

机构：

[1] UNIV SURREY,DEPT PHYS,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 19期

关键词：

semiconductor optical amplifiers; semiconductor junction lasers;

D O I：

10.1049/el:19961220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An angled facet strained MQW semiconductor laser amplifier with integrated mode expanders has been designed and fabricated. A device without antireflection coatings had <0.5dB gain ripple and 0.5dB polarisation sensitivity at 25dB gain.

引用

页码：1835 / 1836

页数：2

共 4 条

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ELECTRONICS LETTERS, 1995, 31 (09) :730-731

[2] INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH 1.8-DB COUPLING LOSS TO CLEAVED SINGLEMODE FIBER [J].

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[3] 1.56-MU-M INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER [J].

LEALMAN, IF ;

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PERRIN, SD ;

ROBERTSON, MJ .

ELECTRONICS LETTERS, 1994, 30 (11) :857-859

[4] THEORETICAL AND EXPERIMENTAL STUDIES OF A SPOT-SIZE TRANSFORMER WITH INTEGRATED WAVE-GUIDE FOR POLARIZATION-INSENSITIVE OPTICAL AMPLIFIERS [J].

MERSALI, B ;

BRUCKNER, HJ ;

FEUILLADE, M ;

SAINSON, S ;

OUGAZZADEN, A ;

CARENCO, A .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (09) :1865-1872

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