Charge density wave transport in submicron antidot arrays in NbSe3

被引：17

作者：

Latyshev, YI

Pannetier, B

Monceau, P

机构：

[1] Univ Grenoble 1, CNRS, Ctr Rech Tres Basses Temp, F-38042 Grenoble 9, France

[2] Russian Acad Sci, Inst Radioengn & Elect, Moscow 103907, Russia

来源：

EUROPEAN PHYSICAL JOURNAL B | 1998年 / 3卷 / 04期

关键词：

D O I：

10.1007/s100510050331

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We demonstrate for the first time that a periodic array of submicrometer holes (antidots) can be patterned into thin single NbSe3 crystals. We report on the study of Charge Density Wave (CDW) transport of the network of mesoscopic units between antidots. Size of the elementary unit can be as small as 0.5 mu m along the chain axis and 0.2 mu m x 0.3 mu m in cross-section. We observe size effects for Ohmic residual resistance and in CDW transport current-voltage characteristics in submicronic networks.

引用

页码：421 / 426

页数：6

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