Carrier density collapse and colossal magnetoresistance in doped manganites

被引:255
作者
Alexandrov, AS [1 ]
Bratkovsky, AM
机构
[1] Loughborough Univ Technol, Dept Phys, Loughborough LE11 3TU, Leics, England
[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA
关键词
D O I
10.1103/PhysRevLett.82.141
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A novel ferromagnetic transition, accompanied by carrier density collapse, is found in doped charge-transfer insulators with strong electron-phonon coupling. The transition is driven by an exchange interaction of polaronic carriers with localized spins the strength of the interaction determines whether the transition is first or second order. A giant drop in the number of current carriers during the transition, which is a consequence of bound pair formation in the paramagnetic phase close to the transition, is extremely sensitive to an external magnetic field. This carrier density collapse describes the resistivity peak and the colossal magnetoresistance of doped manganites. [S0031-9007(98)08141-1].
引用
收藏
页码:141 / 144
页数:4
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