Interfacial adhesion of copper-low k interconnects

被引：78

作者：

Scherban, T ^{[1
]}

Sun, B ^{[1
]}

Blaine, J ^{[1
]}

Block, C ^{[1
]}

Jin, B ^{[1
]}

Andideh, E ^{[1
]}

机构：

[1] Intel Corp, Qual & Reliabil, Hillsboro, OR USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m(2) is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to low k dielectric films than CVD barriers. Surface treatments of the dielectric film before barrier deposition are found to strongly modulate CVD barrier to spin-on polymer adhesion.

引用

页码：257 / 259

页数：3