Terahertz range quantum well infrared photodetector

被引：200

作者：

Graf, M

Scalari, G

Hofstetter, D

Faist, J

Beere, H

Linfield, E

Ritchie, D

Davies, G

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[3] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.1641165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a GaAs/AlGaAs-based far-infrared quantum well infrared photodetector at a wavelength of lambda=84 mum. The relevant intersubband transition is slightly diagonal with a dipole matrix element of 3.0 nm. At 10 K, a responsivity of 8.6 mA/W and a detectivity of 5x10(7) cm rootHz/W have been achieved; and successful detection up to a device temperature of 50 K has been observed. Being designed for zero bias operation, this device profits from a relatively low dark current and a good noise behavior. (C) 2004 American Institute of Physics.

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页码：475 / 477

页数：3

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