Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory

被引：25

作者：

Chan, K. C. ^{[1
]}

Lee, P. F. ^{[1
]}

Dai, J. Y. ^{[1
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

D O I：

10.1063/1.2936847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A floating gate memory structure containing HfAlO control gate, self-organized Au nanocrystals (NCs), and a HfAlO tunnel layer has been fabricated by pulsed-laser deposition. Owing to the charging effects of Au NCs, a significant threshold voltage shift has been obtained and the memory window up to 10.0 V and stored charge density up to 1x10(14)/cm(2) has been achieved. Fowler-Nordheim tunneling mechanism is used to analyze the capacitance-voltage characteristics of the trilayer memory structure, and it is found that higher density and smaller size of the Au NCs result in a higher tunneling coefficient and a larger memory window. (c) 2008 American Institute of Physics.

引用

页数：3

共 19 条

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