Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis-dimethyl-amino titanium in the Cu/TiN/Si structure

被引：37

作者：

Kim, DH ^{[1
]}

Cho, SL ^{[1
]}

Kim, KB ^{[1
]}

Kim, JJ ^{[1
]}

Park, JW ^{[1
]}

Kim, JJ ^{[1
]}

机构：

[1] SEOUL NATL UNIV,SEOUL,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期

关键词：

D O I：

10.1063/1.116979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated diffusion barrier performance of chemical vapor deposition (CVD) TiN films prepared using tetrakis-dimethyl-amino titanium, Ti[N(CH3)(2)](4), to copper in the Cu/TiN/Si structure. The in situ treatment of the TiN films using N-2/H-2 plasma was found to significantly improve barrier performance against copper diffusion. The plasma-treated TiN films were stable up to 650 degrees C but as-deposited TiN films showed an evidence of copper diffusion into silicon even after annealing of 550 degrees C. The causes of the different effectiveness as a copper diffusion barrier of the two types of the CVD TiN films were discussed. (C) 1996 American Institute of Physics.

引用

页码：4182 / 4184

页数：3

共 7 条

[1] THERMAL-STABILITY STUDY OF TIN/TISI2 DIFFUSION BARRIER BETWEEN CU AND N+SI [J].