Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells

被引：17

作者：

Honda, T

Miyamoto, T

Sakaguchi, T

Kawanishi, H

Koyama, F

Iga, K

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 192, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

基金：

日本学术振兴会;

关键词：

GaN; quantum well; Piezo effect; lasers;

D O I：

10.1016/S0022-0248(98)00230-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The transition probability has been estimated in strained GaN/AlGaN quantum wells (QWs) taking into account a carrier separation caused by the piezo electric field. It is found that the decrease of transition probability is not significant under high-level carrier injection for weakly strained QWs as high as 0.2%. However, that decrease should be considered in strongly strained QWs as about 1%. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：644 / 647

页数：4

共 14 条

[1]

Akasaki I, 1996, INST PHYS CONF SER, V142, P7

[2]

AMANO H, 1996, MRS FALL M NO 1 2 BO

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