Amperometric oxygen sensors based on dense Tb-Y-Zr-O electrodes

被引:9
作者
Brosha, EL [1 ]
Chung, BW [1 ]
Brown, DR [1 ]
Raistrick, ID [1 ]
Garzon, FH [1 ]
机构
[1] Univ Calif Los Alamos Natl Lab, Electr & Electrochem Mat & Devices Grp, Los Alamos, NM 87545 USA
关键词
oxygen sensors; diffusion barriers; limiting current sensors;
D O I
10.1016/S0167-2738(98)00102-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The fabrication and operation of a new type of amperometric linear response oxygen sensor is demonstrated that utilizes a 16 mu m thick, dense Tb-YSZ film of composition Y0.2Tb0.24Zr0.56O2-y as a solid state chemical oxygen diffusion barrier. The device exhibits a near linear response between 750 and 850 degrees C between 0.2 and 4.5% O-2 in nitrogen. The effective linear range of operation at 800 degrees C is extended to above 8.0% O-2 With the application of albite (Na-Al-Si-O) glass to limit leakage at the edges (gas-substrate-diffusion barrier interface) of the device. Thin film high temperature cyclic voltammetry performed on Tb-YSZ films of similar stoichiometry indicate thermodynamic stability to below 10(-30) atm pO(2) at 750 degrees C. The initial performance of this device taken together with the inherent chemical stability of the diffusion barrier-suggests that devices of this type may be suitable for use as control sensors for lean-burn internal combustion engines. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:73 / 80
页数:8
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