Reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor

被引：272

作者：

Schwartz, DA ^{[1
]}

Gamelin, DR ^{[1
]}

机构：

[1] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 23-24期

关键词：

D O I：

10.1002/adma.200400456

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor. Co2+:ZnO, is achieved by lattice incorporation and removal of the native n-type defect, interstitial Zn, resulting in "off" and "on" states (Figure. red triangles and blue circles). Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results suggest new opportunities for integrating, magnetism and conductivity in semiconductor sensor or spin-based electronics devices.

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页码：2115 / +

页数：6

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