Highly efficient femtosecond Yb:KYW laser pumped by single narrow-stripe laser diode

被引：34

作者：

Lagatsky, AA ^{[1
]}

Rafailov, EU

Leburn, CG

Brown, CTA

Xiang, N

Okhotnikov, OG

Sibbett, W

机构：

[1] Univ St Andrews, Sch Phys & Astron, JF Allen Phys Res Labs, Ultrafast Photon Collaborat, St Andrews KY16 9SS, Fife, Scotland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-333101 Tampere, Finland

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 15期

关键词：

D O I：

10.1049/el:20030735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly efficient and low threshold passively modelocked femtosecond Yb:KYW laser pumped by an InGaAs narrow-stripe laser diode is demonstrated. Near-transform limited pulses of 123 fs at 1047 nm were produced at an average modelocked power of 107 mW for only 308 mW of incident pump power. An optical-to-optical conversion efficiency of 35% was achieved and the corresponding electrical-to-optical efficiency exceeded 14%.

引用

页码：1108 / 1110

页数：3

共 9 条

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