AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

被引：69

作者：

Hikita, M ^{[1
]}

Yanagihara, M

Nakazawa, K

Ueno, H

Hirose, Y

Ueda, T

Uemoto, Y

Tanaka, T

Ueda, D

Egawa, T

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, Osaka 6178520, Japan

[2] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 09期

关键词：

AlGaN/GaN heterojunction field-effect transistors (HFETs); back-side field plate; high breakdown voltage; high-power switching device; low specific on-state resistance; Si substrate;

D O I：

10.1109/TED.2005.854265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establishing a high-quality epitaxial technology on a Si substrate and by significantly reducing the parasitic resistance, a very low specific on-state resistance of 1.9 m Omega (.) cm(2) is achieved. The breakdown voltage is as high as 350 V, which is attributed to the Si substrate acting as a backside field plate. Because of reduction of the parasitic inductance, very high level of current (2.0 kA/cm(2)) transients, i.e., a turn-on time of 98 ps and a turn-off time of 96 ps, are successfully measured for the first time.

引用

页码：1963 / 1968

页数：6

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