Effect of stress on dopant and defect diffusion in Si: A general treatment
被引:44
作者:
Daw, MS
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机构:
Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USAMotorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
Daw, MS
[1
]
Windl, W
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机构:Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
Windl, W
Carlson, NN
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机构:Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
Carlson, NN
Laudon, M
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机构:Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
Laudon, M
Masquelier, MP
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机构:Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
Masquelier, MP
机构:
[1] Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
[2] Motorola Inc, Computat Mat Grp, Los Alamos, NM 87545 USA
来源:
PHYSICAL REVIEW B
|
2001年
/
64卷
/
04期
关键词:
D O I:
10.1103/PhysRevB.64.045205
中图分类号:
T [工业技术];
学科分类号:
08 [工学];
摘要:
We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P. H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to two examples in Si: (1) a vacancy, including Jahn-Teller distortions, and (2) a B-I pair. Both are predicted to show isotropic diffusion for (100) grown uniaxially strained film, but strong anisotropic diffusion for (111) films.