Effect of stress on dopant and defect diffusion in Si: A general treatment

被引:44
作者
Daw, MS [1 ]
Windl, W
Carlson, NN
Laudon, M
Masquelier, MP
机构
[1] Motorola Inc, Digital DNA Labs, Computat Mat Grp, Austin, TX 78721 USA
[2] Motorola Inc, Computat Mat Grp, Los Alamos, NM 87545 USA
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 04期
关键词
D O I
10.1103/PhysRevB.64.045205
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P. H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to two examples in Si: (1) a vacancy, including Jahn-Teller distortions, and (2) a B-I pair. Both are predicted to show isotropic diffusion for (100) grown uniaxially strained film, but strong anisotropic diffusion for (111) films.
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页数:10
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