Optical energy storage properties of Sr2MgSi2O7:Eu2+,R3+ persistent luminescence materials
被引:49
作者:
Brito, Hermi F.
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Univ Sao Paulo, Dept Quim Fundamental, Inst Quim, BR-05508900 Sao Paulo, BrazilTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Brito, Hermi F.
[2
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Hassinen, Jukka
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Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Hassinen, Jukka
[3
]
Holsa, Jorma
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Turku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Univ Sao Paulo, Dept Quim Fundamental, Inst Quim, BR-05508900 Sao Paulo, Brazil
Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Holsa, Jorma
[1
,2
,3
]
Jungner, Hogne
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Univ Helsinki, Dating Lab, FIN-00014 Helsinki, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Jungner, Hogne
[4
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Laamanen, Taneli
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Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Laamanen, Taneli
[3
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Lastusaari, Mika
[1
,3
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Malkamaki, Marja
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Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Malkamaki, Marja
[3
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Niittykoski, Janne
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Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Niittykoski, Janne
[3
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Novak, Pavel
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Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech RepublicTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Novak, Pavel
[5
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Rodrigues, Lucas C. V.
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Univ Sao Paulo, Dept Quim Fundamental, Inst Quim, BR-05508900 Sao Paulo, Brazil
Univ Turku, Dept Chem, Turku 20014, FinlandTurku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
Rodrigues, Lucas C. V.
[2
,3
]
机构:
[1] Turku Univ, Ctr Mat & Surfaces MatSurf, Turku, Finland
[2] Univ Sao Paulo, Dept Quim Fundamental, Inst Quim, BR-05508900 Sao Paulo, Brazil
[3] Univ Turku, Dept Chem, Turku 20014, Finland
[4] Univ Helsinki, Dating Lab, FIN-00014 Helsinki, Finland
The details of the mechanism of persistent luminescence were probed by investigating the trap level structure of Sr2MgSi2O7:Eu2+,R3+ materials (R: Y, La-Lu, excluding Pm and Eu) with thermoluminescence (TL) measurements and Density Functional Theory (DFT) calculations. The TL results indicated that the shallowest traps for each Sr2MgSi2O7:Eu2+,R3+ material above room temperature were always ca. 0.7 eV corresponding to a strong TL maximum at ca. 90 A degrees C. This main trap energy was only slightly modified by the different co-dopants, which, in contrast, had a significant effect on the depths of the deeper traps. The combined results of the trap level energies obtained from the experimental data and DFT calculations suggest that the main trap responsible for the persistent luminescence of the Sr2MgSi2O7:Eu2+,R3+ materials is created by charge compensation lattice defects, identified tentatively as oxygen vacancies, induced by the R3+ co-dopants.