Self-assembled synthesis of hierarchically porous NiO film and its application for electrochemical capacitors

被引:165
作者
Zhang, Y. Q.
Xia, X. H.
Tu, J. P. [1 ]
Mai, Y. J.
Shi, S. J.
Wang, X. L.
Gu, C. D.
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国博士后科学基金;
关键词
Nickel oxide; Electrochemical capacitor; Porous film; NANOSTRUCTURED MANGANESE-DIOXIDE; NICKEL-OXIDE FILM; ELECTRODE MATERIALS; FABRICATION; DEPOSITION; NANOTUBES; ARRAYS; CARBON; ANODE; RUO2;
D O I
10.1016/j.jpowsour.2011.10.065
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A hierarchically porous NiO film on nickel foam substrate is prepared by a facile ammonia-evaporation method. The self-assembled film possesses a structure consisting of NiO triangular prisms and randomly porous NiO nanoflakes. The pseudocapacitive behaviors of the porous NiO film are investigated by cyclic voltammograms and galvanostatic charge-discharge tests in 1 M KOH. The hierarchically porous NiO film exhibits a high discharge capacitance and excellent rate capability with 232 F g(-1), 229 F g(-1), 213 F g(-1) and 200 F g(-1) at 2, 4, 10, and 20 A g(-1), respectively. The specific capacitance of 87% is maintained from 2 A g(-1) to 20 A g(-1). The porous NiO film also shows rather good cycling stability and exhibits a specific capacitance of 348 F g(-1) after 4000 cycles. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:413 / 417
页数:5
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