Thickness-dependent in-plane magnetic anisotropy in epitaxial Fe films on GaAs substrates

被引：11

作者：

Gester, M ^{[1
]}

Daboo, C ^{[1
]}

Hicken, RJ ^{[1
]}

Gray, SJ ^{[1
]}

Bland, JAC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

THIN SOLID FILMS | 1996年 / 275卷 / 1-2期

关键词：

anisotropy; epitaxy; iron; gallium arsenide;

D O I：

10.1016/0040-6090(95)07060-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the evolution of the magnetic in-plane anisotropy in epitaxial Fe/GaAs films for both (001) and ((1) over bar 10) orientations as a function of the Fe layer thickness using the in-situ longitudinal magneto-optic Kerr effect and ex-situ Brillouin light scattering. Magnetisation curves recorded during film growth reveal a continuous directional change of the anisotropy axes with increasing film thickness. This behaviour arises from the combination of a uniaxial and a cubic in-plane magnetic anisotropy which are both thickness dependent. We discuss the possible origins for this behaviour considering the substrate preparation and the structure of the Fe films.

引用

页码：91 / 94

页数：4

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