Technology aspects of a CMOS neuro-sensor: Back end process and packaging

被引：12

作者：

Hofmann, F ^{[1
]}

Eversmann, B ^{[1
]}

Jenkner, M ^{[1
]}

Frey, A ^{[1
]}

Merz, M ^{[1
]}

Birkenmaier, T ^{[1
]}

Fromherz, P ^{[1
]}

Schreiter, M ^{[1
]}

Gabl, R ^{[1
]}

Plehnert, K ^{[1
]}

Steinhauser, M ^{[1
]}

Eckstein, G ^{[1
]}

Thewes, R ^{[1
]}

机构：

[1] Infineon Technol, Corp Res, D-81730 Munich, Germany

来源：

ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2003年

关键词：

D O I：

10.1109/ESSDERC.2003.1256837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS-compatible process is presented which allows to realize sensor arrays for non-invasive, extracellular, high density, long term recording of neural activity. A high-permittivity bio-compatible dielectric is used to capacitivly couple nerve cell-induced biological signals to the CMOS circuitry-based electronic world. The transducer consists of a multi layer of TiO2 and ZrO2 and is fabricated in the backend of a 0.5 mum standard CMOS technology. Living cells are cultured within a specific package on top of the sensor chip. First measurements reveal proper operation of the chip.

引用

页码：167 / 170

页数：4

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