High isolation dual-polarized patch antenna using integrated defected ground structure

被引:118
作者
Chung, Y [1 ]
Jeon, SS
Ahn, D
Choi, JI
Itoh, T
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Soonchunhyang Univ, Div Informat Technol Engn, Chungnam, South Korea
[3] Elect & Telecommun Res Inst, Taejon, South Korea
关键词
characteristic impedance; defected ground structure; dual polarization; isolation; patch antenna;
D O I
10.1109/LMWC.2003.821501
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a high isolation dual-frequency orthogonally polarized rectangular patch antenna utilizing microstrip feed line integrated with a defected ground structure (DGS). The demonstrated approach results in a significant improvement in port isolation in comparison to a conventional dual-polarized antenna fed by simple microstrip lines. Measurements show an improvement of 20 dB in port isolation relative to the conventional antenna, operating at 2 and 2.5 GHz. Image impedance of a microstrip line with DGS is controlled by the DGS geometry without modifying the dimension of the line. A 150 Q high impedance line is effectively implemented using a microstrip line with 75 Omega line width by incorporating the DGS.
引用
收藏
页码:4 / 6
页数:3
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