A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(110) surfaces

被引：6

作者：

de Kort, R ^{[1
]}

Kets, W ^{[1
]}

van Kempen, H ^{[1
]}

机构：

[1] Univ Nijmegen, Inst Mat Res, NL-6525 ED Nijmegen, Netherlands

来源：

SURFACE SCIENCE | 2001年 / 482卷

关键词：

scanning tunneling microscopy; surface electronic phenomena (work function; surface potential; surface states; etc.); surface structure; morphology; roughness; and topography; tunneling; indium phosphide; low index single crystal surfaces; surface defects; semiconducting surfaces;

D O I：

10.1016/S0039-6028(00)01072-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A low-temperature scanning tunneling microscope has been used to study the (1 1 0)-cleavage surface of indium. phosphide (InP) at 4.2 K. InP is a III-V compound semiconductor, and we studied the behavior of doping atoms at different bias voltages in both n- and p-type InP. In neither the n- nor the p-type InP did we observe Friedel oscillations, but the p-type InP with a Zn-dopant concentration of 2.7 x 10(18) cm(-3) showed an interesting behavior at positive sample voltages: upon moving the tip Fermi level to the bottom of the conduction band, we observed that depressions in the surface topography caused by the influence of the Zn doping atoms changed into elevations with a triangular shape, This has previously been observed on p-type GaAs(1 1 0), and an explanation for these triangular features is not yet available. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：495 / 500

页数：6

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