Ion beam processing of single crystalline silicon carbide

被引：28

作者：

Skorupa, W

Heera, V

Pacaud, Y

Weishart, H

机构：

[1] Inst. Ionenstrahlphysik/M., Forschungszentrum Rossendorf e.V.

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

关键词：

SiC; ion implantation; radiation damage; defect removal; recrystallisation; doping; metallisation;

D O I：

10.1016/S0168-583X(96)00491-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A short review is presented concerning problems of ion beam processing of single crystalline silicon carbide. Emphasis is given to recent results on point defects, extended defects, amorphisation and recrystallisation, electrical activation of dopant atoms, and metallisation.

引用

页码：114 / 120

页数：7

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